Work

Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

Year: 2005

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.12.169

Authors: E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Brückner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler

Institutions: Ferdinand-Braun-Institut, Universität Ulm, Aixtron (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2034480457

FWCI: 3.122

Cites: 13

Cited by: 64

Related to: 10