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Jenq-Dar Tsay

Observed names: J. D. Tsay, J.-D. Tsay, J.D. Tsay, Jeng Dar Tsay, Jeng‐Dar Tsay, Jenq Dar Tsay, Jenq‐Dar Tsay, Jenq‐dar Tsay
OpenAlex ID: A5111933046
Effects of Molar Ratio of Citric Acid to Cations and of pH Value on the Formation and Thermal‐Decomposition Behavior of Barium Titanium Citrate
1999 · Jenq‐dar Tsay, Tsang‐tse Fang · Journal of the American Ceramic Society · 83
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
2005 · E. Richter, Ch. Hennig, et al. · Journal of Crystal Growth · 64
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
2009 · C. L. Chao, C. H. Chiu, et al. · Applied Physics Letters · 48
Evolution of the formation of barium titanate in the citrate process: the effect of the pH and the molar ratio of barium ion and citric acid
1998 · Jenq-Dar Tsay, Tsang-Tse Fang, et al. · Journal of Materials Science · 48
Effect of pH on the Chemistry of the Barium Titanium Citrate Gel and Its Thermal Decomposition Behavior
2001 · Tsang‐Tse Fang, Jenq‐Dar Tsay · Journal of the American Ceramic Society · 36
The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas
2003 · Hai-Ping Liu, Jenq-Dar Tsay, et al. · Journal of Crystal Growth · 32
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
2009 · Shih-Chun Ling, Chu-Li Chao, et al. · Applied Physics Letters · 28
Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
2009 · Shih-Chun Ling, Chu-Li Chao, et al. · Journal of Crystal Growth · 19
Effects of Temperature and Atmosphere on the Formation Mechanism of Barium Titanate Using the Citrate Process
1996 · Jenq‐Dar Tsay, Tsang‐Tse Fang · Journal of the American Ceramic Society · 18
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
2009 · Hsin-Hsiung Huang, Chu-Li Chao, et al. · Journal of Crystal Growth · 17
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
2010 · Kuei-Ming Chen, Yen-Hsien Yeh, et al. · Journal of Crystal Growth · 13
Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
2009 · Shih-Chun Ling, Te-Chung Wang, et al. · IEEE Photonics Technology Letters · 10
Triangular Extended Microtunnels in GaN Prepared by Selective Crystallographic Wet Chemical Etching
2008 · Hsin-Hsiung Huang, Pei-Lun Wu, et al. · Journal of The Electrochemical Society · 8
Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness
2005 · Frank Habel, Peter Brückner, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
2010 · Kuei-Ming Chen, Yen-Hsien Yeh, et al. · Japanese Journal of Applied Physics · 5
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InGaN-Based Light-Emitting Diodes with a Multiple-Air-Gap Layer
2009 · Chia-Feng Lin, Chung-Chieh Yang, et al. · Electrochemical and Solid-State Letters · 5
Growth of free‐standing non‐polar GaN on (100) γ‐LiAlO2 substrates by hydride vapor phase epitaxy
2010 · Mitch M.C. Chou, D. R. Hang, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Internal quantum efficiency behavior of a‐plane and c‐plane InGaN/GaN multiple quantum well with different indium compositions
2008 · Te‐Chung Wang, Tsung‐Shine Ko, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a ‐plane GaN
2008 · E. Y. Lin, C. Y. Chen, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Efficiency enhancement of 400 nm violet LEDs utilizing island‐like GaN thick film by HVPE technology
2007 · Jenq‐Dar Tsay, Po Chun Liu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Influence of Growth Temperature on Surface Morphologies of GaN Crystals Grown on Dot-Patterned Substrate by Hydride Vapor Phase Epitaxy
2004 · Hai-Ping Liu, In-Gann Chen, et al. · Journal of Electroceramics · 4
Comparison of different template structures for high quality and self-separation thick GaN growth
2010 · Yen-Hsiang Fang, Chu-Li Chao, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN
2010 · E.Y. Lin, C.Y. Chen, et al. · Physica B Condensed Matter · 3
Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride
2009 · Chen-Yang Huang, Hao-Min Ku, et al. · Optics Express · 3
Self‐separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy
2007 · Chih‐Ming Lai, Wen Yu Liu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2
Works count: 32
Citation count: 476
H-index: 11
I10-index: 12
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