Work

Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement

Year: 2006

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2006.08.008

Authors: Pierre Morin, Claude Ortolland, Eric Mastromatteo, Catherine Chaton, Franck Arnaud

Institutions: STMicroelectronics (France), Philips (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2035932259

FWCI: 1.641

Cites: 6

Cited by: 11

Related to: 10