Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer
Year: 2007
Type: article
Source: Microelectronic Engineering
Authors: R. Singanamalla, H. Yu, B.J. O’Sullivan, J. Petry, A. Mercha, V. Paraschiv, H. Volders, S. Kubicek, K. De Meyer, S. Biesemans
Institutions: IMEC, KU Leuven, NXP (Belgium)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2036033131