Work

Carrier concentration profiles by high-energy boron ion implantation into silicon

Year: 1991

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/0168-583x(91)95772-6

Authors: H. Sayama, M. Takai, S. Namba, H. Ryssel

Institutions: Fraunhofer Institute for Integrated Circuits, Fraunhofer-Gesellschaft, The University of Osaka

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science

OpenAlex ID: W2036620451

FWCI: 1.801

Cites: 8

Cited by: 6

Related to: 10