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H. Sayama

Observed names: H Sayama, Hirokazu SAYAMA, Hirokazu Sayama, Hirokazu Sayama Hirokazu Sayama, Sayama Hirokazu
Observed institutions: Mitsubishi Corporation (United States), Mitsubishi Corporation (Japan), Fraunhofer Institute for Integrated Circuits, Mitsubishi Electric (Japan), Renesas Electronics (Japan), Fraunhofer-Gesellschaft, The University of Osaka
OpenAlex ID: A5110160976
Novel locally strained channel technique for high performance 55nm CMOS
2003 · K. Ota, K. Sugihara, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 97
Effect of >100< channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length
2003 · H. Sayama, Y. Nishida, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Novel SOI wafer engineering using low stress and high mobility CMOSFET with >100<-channel for embedded RF/analog applications
2003 · T. Matsumoto, S. Maeda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes
1996 · M. Takai, T. Kishimoto, et al. · IEEE Transactions on Nuclear Science · 18
70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications
2002 · T. Matsumoto, S. Maeda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Deep levels induced by high-energy boron ion implantation into p-silicon
1992 · H. Sayama, M. Takai, et al. · Applied Physics Letters · 16
Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
1993 · Hirokazu Sayama, Hiroshi Kimura, et al. · Japanese Journal of Applied Physics · 15
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New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
1992 · Hirokazu Sayama, Shigenori Hara, et al. · Japanese Journal of Applied Physics · 14
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Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
1989 · Hirokazu Sayama, Mikio Takai, et al. · Japanese Journal of Applied Physics · 14
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Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N[sub 2]O-Grown Oxynitride
2000 · A. Teramoto, H. Umeda, et al. · Journal of The Electrochemical Society · 11
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Near-surface defects formed by MeV ion implantation into silicon
1993 · H. Sayama, A. Kinomura, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10
SoC CMOS technology for NBTI/HCI immune I/O and analog circuits implementing surface and buried channel structures
2002 · Y. Nishida, H. Sayama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Soft error immunity in a DRAM investigated by nuclear microprobes
1993 · M. Takai, H. Sayama, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 9
80 nm CMOSFET technology using double offset-implanted source/drain extension and low temperature SiN process
2002 · H. Sayama, Y. Nishida, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node
2006 · Hayashi, M. Mizutani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
1994 · Takehisa Kishimoto, Hirokazu Sayama, et al. · Japanese Journal of Applied Physics · 6
Charge collection and soft error in DRAMs investigated using 400 keV proton microprobe
1994 · H. Sayama, H. Kimura, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Comparison of laser-induced etching behavior of III?V compound semiconductors
1993 · C. Lee, H. Sayama, et al. · Applied Physics A · 6
Carrier concentration profiles by high-energy boron ion implantation into silicon
1991 · H. Sayama, M. Takai, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Suppression of ion-induced charge collection against soft-error
2002 · T. Kishimoto, N. Takai, et al. · International Conference on Ion Implantation Technology · 5
Experimental Study on the Effect of Recessed Gates in Drain STI Regions of nLDMOSFETs
2019 · Takahiro Mori, Hirokazu Sayama, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
2003 · Kohei Sugihara, Takumi Nakahata, et al. · Japanese Journal of Applied Physics · 4
Low voltage operation of sub-quarter micron W-polycide dual gate CMOS with non-uniformly doped channel
2002 · H. Sayama, T. Kuroi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
Direct measurement and improvement of local soft error susceptibility in dynamic random access memories
1995 · M. Takai, T. Kishimoto, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4
Soft error susceptibility mapping of DRAMs using a high-energy nuclear microprobe
1993 · H. Sayama, H. Kimura, et al. · Microelectronic Engineering · 4
Works count: 57
Citation count: 368
H-index: 10
I10-index: 11
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