Work

Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization

Year: 2008

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2008.04.045

Authors: M. Vilmay, D. Roy, F. Volpi, J.-M. Chaix

Institutions: STMicroelectronics (France), Institut de Physique Nucléaire d’Orsay, Centre National de la Recherche Scientifique, Science et Ingénierie des Matériaux et Procédés

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2039626928

FWCI: 1.492

Cites: 7

Cited by: 35

Related to: 10