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D. Roy
Observed names:
D Roy,
Debojyoti Roy
Institutions:
University of Delhi,
STMicroelectronics (France)
Observed institutions:
University of Delhi,
Centre National de la Recherche Scientifique,
STMicroelectronics (France),
STMicroelectronics (United States),
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence,
STMicroelectronics (Italy)
show all 6
OpenAlex ID:
A5113211895
Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature
2009
·
A. Bravaix
, C. Guerin
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
201
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
2003
·
F. Monsieur
, E. Vincent
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
123
$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared
2021
·
J. S. Steckel
, E. Josse
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
60
Microscopic scale characterization and modeling of transistor degradation under HC stress
2012
·
Yoann Mamy Randriamihaja
, V. Huard
, et al.
·
Microelectronics Reliability
·
54
28nm node bulk vs FDSOI reliability comparison
2012
·
X. Federspiel
, D. Angot
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
46
Energy-driven Hot-Carrier model in advanced nodes
2014
·
W. Arfaoui
, X. Federspiel
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
44
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
2013
·
A. Bravaix
, Y. Mamy Randriamihaja
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
35
Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization
2008
·
M. Vilmay
, D. Roy
, et al.
·
Microelectronic Engineering
·
35
Interaction between BTI and HCI degradation in High-K devices
2013
·
X. Federspiel
, M. Rafik
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
34
Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node
2010
·
A. Bravaix
, C. Guerin
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
32
Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests
2013
·
E. Chery
, X. Federspiel
, et al.
·
Microelectronic Engineering
·
29
New perspectives on NBTI in advanced technologies: modelling & characterization
2005
·
M. Denais
, V. Huard
, et al.
·
European Solid-State Device Research Conference
·
24
Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating
2016
·
A. Laurent
, X. Garros
, et al.
·
Symposium on VLSI Technology
·
22
Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
2003
·
F. Monsieur
, E. Vincent
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
22
Reliability issues for nano-scale CMOS dielectrics
2007
·
G. Ribes
, M. Rafik
, et al.
·
Microelectronic Engineering
·
20
Origin of Vt Instabilities in High- $k$ Dielectrics Jahn–Teller Effect or Oxygen Vacancies
2006
·
G. Ribes
, S. Bruyere
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
20
Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters
2012
·
Y. Mamy Randriamihaja
, A. Zaka
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
19
High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
2010
·
G. Ribes
, P. Mora
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
19
Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox>32Å)
2002
·
F. Monsieur
, E. Vincent
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
18
Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes
2013
·
W. Arfaoui
, X. Federspiel
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
17
Application of compact HCI model to prediction of process effect in 28FDSOI technology
2014
·
W. Arfaoui
, X. Federspiel
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
16
Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks
2014
·
A. Bezza
, M. Rafik
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
16
Experimental characterization of the interactions between HCI, off-state and BTI degradation modes
2011
·
X. Federspiel
, F. Cacho
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
16
Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)
2003
·
T. Devoivre
, M. Lunenborg
, et al.
·
Records of the IEEE International Workshop on Memory Technology, Design, and Testing
·
16
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions
2001
·
F. Monsieur
, E. Vincent
, et al.
·
Microelectronics Reliability
·
15
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Works count:
101
Citation count:
1,367
H-index:
18
I10-index:
38
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