Work

Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox>32Å)

Year: 2002

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/irws.2001.993911

Authors: F. Monsieur, E. Vincent, D. Roy, S. Bruyre, G. Pananakakis, G. Ghibaudo

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Commission

OpenAlex ID: W1820122247

FWCI: 1.502

Cites:

Cited by: 18

Related to: 10