Work

Reactive ion etching induced damage to SiO2 and SiO2–Si interfaces in polycrystalline Si overetch

Year: 1993

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.578547

Authors: Tieer Gu, R. A. Ditizio, O. O. Awadelkarim, S. J. Fonash, J. F. Rembetski, P. Aum, K. A. Reinhardt, Y. D. Chan

Institution: Pennsylvania State University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2040312965

FWCI: 1.922

Cites:

Cited by: 4

Related to: 10