Work

High electron mobility pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure on InP grown by flux-stabilized MBE

Year: 1991

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(91)90795-7

Authors: Yoshinobu Sugiyama, Yukihiro Takeuchi, Munecazu Tacano

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2048825834

FWCI: 1.21

Cites: 9

Cited by: 19

Related to: 10