Work

Implementing cubic-phase HfO2 with κ-value ∼ 30 in low-VT replacement gate pMOS devices for improved EOT-Scaling and reliability

Year: 2012

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.2012.6242444

Authors: Lars-Ake Ragnarsson, Christoph Adelmann, Yuichi Higuchi, Karl Opsomer, Anabela Veloso, Soon Aik Chew, Erika Rohr, Emma Vecchio, Xiaoping Shi, Katia Devriendt, Farid Sebaai, Thomas Kauerauf, Malgorzata Anna Pawlak, Tom Schram, Sven Van Elshocht, Naoto Horiguchi, Aaron Thean

Institution: IMEC

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052230618

FWCI: 3.656

Cites: 2

Cited by: 10

Related to: 10