Electrical properties of MOS devices made with SILO technology
Year: 1982
Type: conference-paper
Authors: J. Hui, T.Y. Chiu, S. Wong, W.G. Oldham
Institution: University of California, Berkeley
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2053129643