Author

T.-Y. Chiu

Observed names: T-Y. Chiu, T. Chiu, T. Y. Chiu, T.Y. CHIU, T.Y. Chiu

Institution: AT&T (United States)

Observed institutions: AT&T (United States), University of California, Irvine, University of California, Berkeley

OpenAlex ID: A5111933803

Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor

1991 · T.M. Liu, T.-Y. Chiu, et al. · IEEE Transactions on Electron Devices · 30

Selective oxidation technologies for high density MOS

1981 · J. Hui, T.Y. Chiu, et al. · IEEE Electron Device Letters · 28

Non-overlapping super self-aligned BiCMOS with 87 ps low power ECL

2003 · T.-Y. Chiu, G.M. Chin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19

A Half-micron Super Self-aligned BiCMOS Technology for High Speed Applications

1992 · T. M. Liu, G.M. Chin, et al. · 19

A high speed super self-aligned bipolar-CMOS technology

1987 · T. Chiu, G.M. Chin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17

Direct measurement of base drift field in bipolar transistors

1992 · R.-H. Yan, T.M. Liu, et al. · IEEE Electron Device Letters · 15

The design and characterization of nonoverlapping super self-aligned BiCMOS technology

1991 · T.-Y. Chiu, G.M. Chin, et al. · IEEE Transactions on Electron Devices · 13

BEST: a BiCMOS-compatible super-self aligned ECL technology

2002 · K.G. Moerschel, T.Y. Chiu, et al. · Custom Integrated Circuits Conference · 12

A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications

1995 · J.M. Sung, T.-Y. Chiu, et al. · IEEE Transactions on Electron Devices · 12

The Material Properties of Silicon Nitride Formed by Low Energy Ion Implantation

1984 · T. Y. Chiu, W. G. Oldham, et al. · Journal of The Electrochemical Society · 12

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Electrical properties of MOS devices made with SILO technology

1982 · J. Hui, T.Y. Chiu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11

Suppression of Arsenic Autodoping with Rapid Thermal Epitaxy for Low Power Bipolar Complementary Metal Oxide Semiconductor

1995 · C. A. King, R. W. Johnson, et al. · Journal of The Electrochemical Society · 10

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Kinetics of ideal dopant segregation in GaAs

1992 · J. E. Cunningham, M. Williams, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10

Analytical modeling of oxide breakup effect on base current in n/sup +/-polysilicon emitter bipolar devices

1992 · J.J. Sung, T.M. Liu, et al. · IEEE Transactions on Electron Devices · 8

Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy

2002 · C.A. King, R.W. Johnson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6

Sealed-interface local oxidation technology

1981 · J. Hui, T.Y. Chiu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5

An ultra high speed ECL-bipolar CMOS technology with silicon fillet self-aligned contacts

2003 · T.M. Liu, G.M. Chin, et al. · Symposium on VLSI Technology · 4

Electrical profiling of collector and base doping concentration

2002 · T.-Y. Chiu, J.J. Sung, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4

Combining transmission electron microscopy with focused ion beam sputtering for microstructural investigations of AlGaAs/GaAs heterojunction bipolar transistors

1995 · C. W. Snyder, M. R. Frei, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 4

Suppression of lateral autodoping from arsenic buried layer by selective epitaxy capping

1990 · T.-Y. Chiu, K.F. Lee, et al. · IEEE Electron Device Letters · 4

High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

2002 · L.W. Yang, S.T. Fu, et al. · IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits · 3

Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors

2005 · M.R. Frei, C.R. Abernathy, et al. · Conference digest · 2

Nonoverlapping super self-aligned device structure for high-performance VLSI

1990 · T.-Y. Chiu, G.M. Chin, et al. · IEEE Electron Device Letters · 2

Determination of base and emitter delay time in advanced self-aligned bipolar technology

2002 · T.-Y. Chiu, M.T.Y. Liu, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 1

Rapid Thermal Epitaxy for Device Applications

1995 · C. A. King, R. W. Johnson, et al. · MRS Proceedings · 1

Works count: 34

Citation count: 253

H-index: 11

I10-index: 13