Work

Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source

Year: 1999

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(98)01350-5

Authors: T Kitatani, M Kondow, K Nakahara, M.C Larson, Y Yazawa, M Okai, K Uomi

Institution: Hitachi (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2054445176

FWCI: 2.817

Cites: 8

Cited by: 23

Related to: 10