Defect studies of resist process for 193nm immersion lithography
Year: 2006
Type: conference-paper
DOI: 10.1117/12.656164
Authors: Tomoyuki Ando, Katsumi Ohmori, Satoshi Maemori, Toshikazu Takayama, Keita Ishizuka, Masaaki Yoshida, Tomoyuki Hirano, Jiro Yokoya, Katsushi Nakano, Tomoharu Fujiwara, Soichi Owa
Institutions: Tokyo Ohka Kogyo (Japan), Nikon (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2058769068
