Work

Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

Year: 2005

Type: article

Source: Semiconductors

DOI: 10.1134/1.1923563

Authors: G. E. Cirlin, V. G. Dubrovskii, A. A. Tonkikh, N. V. Sibirev, V. M. Ustinov, P. Werner

Institutions: Russian Academy of Sciences, Institute for Analytical Instrumentation, Ioffe Institute, Max Planck Institute of Microstructure Physics

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2060057765

FWCI: 0.184

Cites: 7

Cited by: 11

Related to: 10