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A. A. Tonkikh

Observed names: A A Tonkikh, A. A. TONKIKH, A. Tonkikh, A.A Tonkikh, A.A. Tonkikh, Alexander A. Tonkikh, Alexander Tonkikh, Tonkikh, Alexander A., А.А. Тонких
Observed institutions: Russian Academy of Sciences, Saint Petersburg Academic University, Max Planck Society, Saint Petersburg State Electrotechnical University, Max Planck Institute of Microstructure Physics, Institute for Analytical Instrumentation, Institute for Physics of Microstructures, Osram Opto Semiconductors, Martin Luther University Halle-Wittenberg, Ioffe Institute
ORCID: 0000-0003-2564-4331
Observed ORCID: 0000-0003-2564-4331
OpenAlex ID: A5102801432
Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing
2013 · Alexander A. Tonkikh, Christian Eisenschmidt, et al. · Applied Physics Letters · 123
Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
2004 · V.G. Dubrovskii, G.E. Cirlin, et al. · Journal of Crystal Growth · 57
Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
2006 · V.G. Talalaev, G.E. Cirlin, et al. · Nanoscale Research Letters · 36
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Cubic Phase Sn-Rich GeSn Nanocrystals in a Ge Matrix
2014 · Alexander A. Tonkikh, Nikolay D. Zakharov, et al. · Crystal Growth & Design · 35
Ge/Si(100) quantum dots grown via a thin Sb layer
2010 · Alexander Tonkikh, Nikolay Zakharov, et al. · physica status solidi (RRL) - Rapid Research Letters · 33
Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment
2019 · Hayk A. Sarkisyan, David B. Hayrapetyan, et al. · Nanomaterials · 31
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Surfactant-mediated Stranski-Krastanov islands
2013 · Alexander A. Tonkikh, Peter Werner · physica status solidi (b) · 20
Transient spectroscopy of InAs quantum dot molecules
2004 · V. G. Talalaev, J. W. Tomm, et al. · Applied Physics Letters · 17
Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system
2003 · A. A. Tonkikh, V. G. Dubrovskii, et al. · physica status solidi (b) · 15
Lateral photoconductivity in structures with Ge/Si quantum dots
2013 · V. Yu. Panevin, A. N. Sofronov, et al. · Semiconductors · 14
Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
2015 · A.N. Sofronov, L.E. Vorobjev, et al. · Superlattices and Microstructures · 13
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
2018 · A. N. Sofronov, R. M. Balagula, et al. · Semiconductors · 11
Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
2006 · V. G. Talalaev, J. W. Tomm, et al. · Journal of Applied Physics · 11
Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb
2005 · G. E. Cirlin, V. G. Dubrovskii, et al. · Semiconductors · 11
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
2012 · V. G. Talalaev, A. A. Tonkikh, et al. · Semiconductors · 9
Structural and optical properties of InAs quantum dots in AlGaAs matrix
2003 · D. S. Sizov, Yu. B. Samsonenko, et al. · Semiconductors · 9
Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots
2018 · R.M. Balagula, A.N. Sofronov, et al. · Physica E Low-dimensional Systems and Nanostructures · 8
Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
2006 · L E Vorobjev, D A Firsov, et al. · Semiconductor Science and Technology · 8
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1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure
2014 · V. Ya. Aleshkin, A. A. Dubinov, et al. · Journal of Applied Physics · 7
Sb-modified growth of stacked Ge/Si(100) quantum dots
2011 · A.A. Tonkikh, N.D. Zakharov, et al. · Thin Solid Films · 7
Room temperature electroluminescence from multilayer GeSi heterostructures
2006 · A. A. Tonkikh, G. E. Cirlin, et al. · physica status solidi (a) · 7
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The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system
2005 · Yu. G. Musikhin, G. E. Cirlin, et al. · Semiconductors · 7
Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate
2004 · V. G. Dubrovskii, Yu. G. Musikhin, et al. · Semiconductors · 7
Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots
2005 · G. E. Cirlin, A. A. Tonkikh, et al. · Physics of the Solid State · 6
1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
2000 · V A Egorov, G E Cirlin, et al. · Nanotechnology · 6
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Works count: 75
Citation count: 569
H-index: 11
I10-index: 14
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