Work

Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells

Year: 2006

Type: article

Abstract: The spectral and polarization dependences of intraband light absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers were studied experimentally and theoretically. The transmittance of p- and s-polarized mid-infrared radiation was studied in a multi-pass sample geometry. Elastic strain, piezoelectric fields and a complex valence band structure were taken into account in calculations of the energy spectrum, the carrier wavefunctions and intraband optical matrix elements. The experimentally determined value of the absorption cross section corresponding to |0 0 0⟩→|0 0 1⟩ intraband electron transitions is 4.1 × 10 −15 cm 2 . Light absorption related to intraband hole transitions was found to be significantly smaller. The dispersion of the dot sizes was evaluated using the experimentally determined spectral widths of intraband absorption peaks.

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/21/9/021

Authors: L E Vorobjev, D A Firsov, V A Shalygin, N K Fedosov, V Yu Panevin, A Andreev, V M Ustinov, G E Cirlin, V A Egorov, A A Tonkikh, F Fossard, M Tchernycheva, Kh Moumanis, F H Julien, S Hanna, A Seilmeier, H Sigg

Institutions: Peter the Great St. Petersburg Polytechnic University, University of Surrey, Ioffe Institute, Institute for Analytical Instrumentation, Université Paris-Sud, University of Bayreuth, Paul Scherrer Institute

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Russian Foundation for Basic Research, Engineering and Physical Sciences Research Council

OpenAlex ID: W2003371326

FWCI: 0.187

Cites: 25

Cited by: 8

Related to: 10