Work

Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

Year: 2012

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782612110218

Authors: V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin

Institutions: Max Planck Institute of Microstructure Physics, Martin Luther University Halle-Wittenberg, St Petersburg University, Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Virginia Tech, Russian Academy of Sciences, Saint Petersburg Academic University, Ioffe Institute, Institute for Analytical Instrumentation

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Saint Petersburg State University, Russian Academy of Sciences

OpenAlex ID: W2136201375

FWCI: 1.063

Cites: 51

Cited by: 9

Related to: 10