Work

Surface segregation mechanism during two-dimensional epitaxial growth: The case of dopants in Si and GaAs molecular-beam epitaxy

Year: 1989

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.342752

Authors: S. Andrieu, F. Arnaud d’Avitaya, J. C. Pfister

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2064320503

FWCI: 3.976

Cites: 42

Cited by: 40

Related to: 10