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François Arnaud d'Avitaya

Observed names: ARNAUD D'ATIVAYA, François, ARNAUD D'AVITAYA, François, Arnaud d'Avitaya, F, Arnaud d'Avitaya, F., Arnaud d'Avitaya, François, D'Avitaya, F.A., F A d'Avitaya, F Arnaud D’Avitaya, F Arnaud d'Avitaya, F Arnaud d’Avitaya, F. A. D'AVITAYA, F. A. d'Avitaya, F. A. d’Avitaya, F. ARNAUD D'AVITAYA, F. ARNAUD d' AVITAYA, F. ARNAUD d'AVITAYA, F. Arnaud, F. Arnaud D'avitaya, F. Arnaud D'Avitaya, F. Arnaud D'avitaya, F. Arnaud D'avltaya, F. Arnaud D’Avitaya, F. Arnaud d' Avitaya, F. Arnaud d'Avitaya, F. Arnaud d’Avitaya, F.A d'Avitaya, F.A. D'Avitaya, F.A. d'Avitaya, F.A. d’Avitaya, F.Arnaud D'Avitaya, F.Arnaud D'avitaya, F.Arnaud d'Avitaya, F.Arnaud d’Avitaya, François Arnaud D'avitaya, François Arnaud D’Avitaya, François Arnaud d’Avitaya, d' Avitaya, F. A., Ф. А. д'Авитая
Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Aix-Marseille Université, Centre Interdisciplinaire de Nanoscience de Marseille, Université Aix-Marseille-III, Université de la Méditerranée Aix-Marseille II, Belarusian State University of Informatics and Radioelectronics
OpenAlex ID: A5111421904
Ab initiomodeling of the structural, electronic, and optical properties of A II B IV C 2V semiconductors
2012 · V. L. Shaposhnikov, A. V. Krivosheeva, et al. · Physical Review B · 145
Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structures
1984 · E. Rosencher, S. Delage, et al. · Electronics Letters · 141
Fabrication and structure of epitaxial Er silicide films on (111) Si
1989 · F. Arnaud d’Avitaya, A. Perio, et al. · Applied Physics Letters · 115
Adsorption of cesium on gallium arsenide (110)
1977 · Jacques Derrien, François Arnaud D'avitaya · Surface Science · 91
Electronic transport properties of epitaxial erbium silicide/silicon heterostructures
1989 · J. Y. Duboz, P. A. Badoz, et al. · Applied Physics Letters · 89
Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor
1992 · L. Pahun, Y. Campidelli, et al. · Applied Physics Letters · 74
Influence of liquid surface tension on stiction of SOI MEMS
2004 · O Raccurt, F Tardif, et al. · Journal of Micromechanics and Microengineering · 73
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Kinetics of formation and properties of epitaxial CoSi2 films on Si (111)
1985 · F. Arnaud D’Avitaya, S. Delage, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 65
Growth, characterization and electrical properties of epitaxial erbium silicide
1990 · F. Arnaud d'Avitaya, P.-A. Badoz, et al. · Thin Solid Films · 64
Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices
1987 · J. Derrien, F. Arnaud d’Avitaya · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 62
Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties
1989 · J.-Y. Duboz, P.-A. Badoz, et al. · Applied Surface Science · 61
Study of ballistic transport in Si-CoSi2-Si metal base transistors
1986 · E. Rosencher, P. A. Badoz, et al. · Applied Physics Letters · 60
Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers
1989 · J. Y. Duboz, P. A. Badoz, et al. · Physical review. B, Condensed matter · 58
Low-temperature transport properties of ultrathin CoSi2 epitaxial films
1987 · P. A. Badoz, A. Briggs, et al. · Applied Physics Letters · 57
Fabrication and optical properties of Si/CaF2(111) multi-quantum wells
1996 · F. Bassani, L. Vervoort, et al. · Journal of Applied Physics · 48
Effect of oxygen on the optical properties of small silicon pyramidal clusters
2002 · A. B. Filonov, Stefano Ossicini, et al. · Physical review. B, Condensed matter · 46
Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge)
2007 · V. L. Shaposhnikov, A. V. Krivosheeva, et al. · physica status solidi (b) · 44
Light Emission at Room Temperature from Si/CaF 2 Multilayers
1995 · F. Arnaud d'Avitaya, L Vervoort, et al. · Europhysics Letters (EPL) · 44
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Orientation effects in the electronic and optical properties of germanium quantum wires
2004 · Alexandre N. Kholod, V. L. Shaposhnikov, et al. · Physical Review B · 42
Antimony adsorption on silicon (111) analyzed in real time by in situ ellipsometry
1989 · S Andrieu, F.Arnaud d'Avitaya · Surface Science · 42
Surface segregation mechanism during two-dimensional epitaxial growth: The case of dopants in Si and GaAs molecular-beam epitaxy
1989 · S. Andrieu, F. Arnaud d’Avitaya, et al. · Journal of Applied Physics · 40
Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistor
1987 · F. Arnaud D'Avitaya, J.A. Chroboczek, et al. · Journal of Crystal Growth · 38
Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopy
1986 · Cécile d'Anterroches, François Arnaud d'Avitaya · Thin Solid Films · 38
Chemical vapor deposition of silicon–germanium heterostructures
2000 · S Bozzo, J.-L Lazzari, et al. · Journal of Crystal Growth · 36
Transient capacitance study of epitaxial CoSi2/Si〈111〉 Schottky barriers
1985 · E. Rosencher, S. Delage, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 35
Works count: 168
Citation count: 2,704
H-index: 28
I10-index: 77
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