Work

In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(0 0 1)

Year: 2006

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/j.nimb.2005.12.044

Authors: M.-I. Richard, T.-U. Schülli, E. Wintersberger, G. Renaud, G. Bauer

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Johannes Kepler University of Linz

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2066192519

FWCI: 0.56

Cites: 12

Cited by: 4

Related to: 10