2009 · Mario Keplinger, Dominik Kriegner, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 18

In situx-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

2009 · M.-I. Richard, T. U. Schülli, et al. · Physical Review B · 18

A higher‐order extended finite element method for dislocation energetics in strained layers and epitaxial islands

2010 · Jay Oswald, Eugen Wintersberger, et al. · International Journal for Numerical Methods in Engineering · 15

Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates

2010 · G. Chen, E. Wintersberger, et al. · Applied Physics Letters · 14

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

2005 · D. Chrastina, G. Isella, et al. · Journal of Crystal Growth · 13

Developing HDF5 for the Synchrotron Community

2015 · Rees, Nick, Billich, Heinrich Rainer, et al. · DORA PSI (Paul Scherrer Institute) · 9

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Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

2012 · N Hrauda, J J Zhang, et al. · Nanotechnology · 8

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3D SiGe QUANTUM DOT CRYSTALS: STRUCTURAL CHARACTERIZATION AND ELECTRONIC COUPLING

2009 · T. FROMHERZ, J. STANGL, et al. · International Journal of Modern Physics B · 5

Growth mode, strain state and shape of Ge islands during their growth at different temperatures: a combined in situ GISAXS and GIXD study

2005 · M.-I. Richard, T.-U. Schülli, et al. · Thin Solid Films · 5

Algorithms for the calculation of X-ray diffraction patterns from finite element data

2010 · E. Wintersberger, D. Kriegner, et al. · Journal of Applied Crystallography · 4

In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(0 0 1)

2006 · M.-I. Richard, T.-U. Schülli, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4

Erratum to “Raman spectroscopy of Si1−Ge epilayers” [Mater. Sci. Eng. B 124–125 (2005) 127–131]

2006 · F. Pezzoli, Lucio Martinelli, et al. · Materials Science and Engineering B · 3

Works count: 30

Citation count: 891

H-index: 15

I10-index: 18