Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies
Year: 2009
Type: article
Source: Thin Solid Films
Authors: A. Colin, P. Morin, R. Beneyton, Luc Pinzelli, D. Mathiot, E. Fogarassy
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2066958331