Work

Process dependence of AC/DC PBTI in HKMG n-MOSFETs

Year: 2014

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps.2014.6861184

Authors: W. Liu, G. La Rosa, C. Tian, S. Boffoli, F. Guarin, W. L. Lai, V. Narayanan, H. Kothari, M. Jin, S. Uppal, W. McMahon

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center, STMicroelectronics (France), Samsung Electronics (South Korea), GlobalFoundries (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2072848844

FWCI: 2.81

Cites: 10

Cited by: 7

Related to: 10