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Wing L. Lai

Observed names: W Lai, W. L. Lai, W. Lai, W.L. Lai, Wing Lai
OpenAlex ID: A5002302744
Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown
2002 · E.Y. Wu, A. Vayshenker, et al. · IEEE Transactions on Electron Devices · 154
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides
2002 · E Wu, J Suñé, et al. · Solid-State Electronics · 125
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
2002 · E. Y. Wu, E. J. Nowak, et al. · IBM Journal of Research and Development · 84
Statistics of competing post-breakdown failure modes in ultrathin MOS devices
2006 · J. Sune, E.Y. Wu, et al. · IEEE Transactions on Electron Devices · 44
Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits
2004 · J. Sune, E.Y. Wu, et al. · IEEE Transactions on Electron Devices · 43
A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell
2003 · M. Khare, S.H. Ku, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling
2004 · E. Wu, E. Nowak, et al. · IEEE International Reliability Physics Symposium proceedings · 34
The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides
2001 · E.Y. Wu, J.M. McKenna, et al. · IEEE Electron Device Letters · 31
High performance bulk planar 20nm CMOS technology for low power mobile applications
2012 · Huiling Shang, S. Jain, et al. · Symposium on VLSI Technology · 29
Critical reliability challenges in scaling SiO2-based dielectric to its limit
2003 · E.Y. Wu, J. Suñé, et al. · Microelectronics Reliability · 29
Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
2003 · E. Wu, W. Lai, et al. · IEEE International Reliability Physics Symposium proceedings · 29
Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides [MOSFET]
2004 · E. Wu, J. Sune, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode
2006 · E. Wu, J. Sune, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Statistics of soft and hard breakdown in thin SiO2 gate oxides
2003 · J. Suñé, E.Y. Wu, et al. · Microelectronics Reliability · 18
Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements
2002 · E.Y. Wu, J. Sune, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides
2001 · E Wu, J Suñé, et al. · Microelectronic Engineering · 18
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
2014 · T. Ando, B. Kannan, et al. · Symposium on VLSI Technology · 14
Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process
2013 · W. McMahon, C. Tian, et al. · IEEE International Reliability Physics Symposium proceedings · 14
Process dependence of AC/DC PBTI in HKMG n-MOSFETs
2014 · W. Liu, G. La Rosa, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Limits of the successive breakdown statistics to assess chip reliability
2004 · Jordi Suñé, Ernest Y. Wu, et al. · Microelectronic Engineering · 7
A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride–oxide dielectrics
2002 · Fen Chen, Rolf-Peter Vollertsen, et al. · Microelectronics Reliability · 7
SOI charging prevention: chip-level net tracing and diode protection
2004 · T.B. Hook, H. Bonges, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 6
Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides
2004 · W Lai, E Wu, et al. · Microelectronic Engineering · 6
Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors
2013 · M. Jin, C. E. Tian, et al. · IEEE International Reliability Physics Symposium proceedings · 4
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
2012 · U. Kwon, K. Wong, et al. · Symposium on VLSI Technology · 4
Works count: 31
Citation count: 817
H-index: 16
I10-index: 18
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