Work

Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides

Year: 2004

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2003.12.009

Authors: W Lai, E Wu, J Suñé

Institutions: IBM (United States), Universitat Autònoma de Barcelona

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2089538352

FWCI: 1.583

Cites: 14

Cited by: 6

Related to: 10