Work

High quality free-standing GaN thick-films prepared by hydride vapor phase epitaxy using stress reducing techniques

Year: 2009

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.814441

Authors: Hsin-Hsiung Huang, Wei-I Lee, Kuei-Ming Chen, Ting-Li Chu, Pei-Lun Wu, Hung-Wei Yu, Po-Chun Liu, Chu-Li Chao, Tung-Wei Chi, Jenq-Dar Tsay, Li-Wei Tu

Institutions: National Yang Ming Chiao Tung University, Industrial Technology Research Institute, National Sun Yat-sen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2073775441

FWCI:

Cites: 24

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Related to: 10