Work

Ultra-high-performance 0.13-μm embedded DRAM technology using TiN/HfO/sub 2//TiN/W capacitor and body-slightly-tied SOI

Year: 2003

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2002.1175966

Authors: Y. Aoki, T. Ueda, H. Shirai, T. Sakoh, T. Kitamura, S. Arai, M. Sakao, K. Inoue, M. Takeuchi, H. Sugimura, M. Hamada, T. Wake, I. Naritake, T. Iizuka, T. Yamamoto, K. Ando, K. Noda

Institution: NEC (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2073777181

FWCI: 0.449

Cites:

Cited by: 3

Related to: 10