Work

Self-pulsation in an InGaN laser-theory and experiment

Year: 2003

Type: article

Abstract: Room-temperature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated.

Source: IEEE Journal of Quantum Electronics

DOI: 10.1109/jqe.2003.819541

Authors: V.Z. Tronciu, M. Yamada, T. Ohno, S. Ito, T. Kawakami, M. Taneya

Institutions: Kanazawa University, Technical University of Moldova, Sharp Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Alexander von Humboldt-Stiftung, Kanazawa University, Japan Society for the Promotion of Science

OpenAlex ID: W2074529323