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M. Taneya

Observed names: M Taneya, M. TANEYA, Mototaka Taneya, Mototaka Taneya Mototaka Taneya, Taneya, Mototaka
OpenAlex ID: A5067665461
Local vibrational modes as a probe of activation process in p-type GaN
1999 · H. Harima, T. Inoue, et al. · Applied Physics Letters · 66
Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
1999 · Takayuki Yuasa, Yoshihiro Ueta, et al. · Japanese Journal of Applied Physics · 52
Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence
1989 · M. Taneya, Y. Sugimoto, et al. · Journal of Applied Physics · 51
Novel electron-beam lithography for i n s i t u patterning of GaAs using an oxidized surface thin layer as a resist
1990 · M. Taneya, Y. Sugimoto, et al. · Journal of Applied Physics · 48
Electron-Beam-Induced Cl2 Etching of GaAs
1989 · Mototaka Taneya, Yoshimasa Sugimoto, et al. · Japanese Journal of Applied Physics · 44
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0° phase mode operation in phased-array laser diode with symmetrically branching waveguide
1985 · M. Taneya, M. Matsumoto, et al. · Applied Physics Letters · 44
Optoelectronic integrated device with light amplification and optical bistability
1984 · A. Sasaki, M. Taneya, et al. · IEEE Transactions on Electron Devices · 43
Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
1990 · Yuji Hiratani, Yoshimasa Ohki, et al. · Japanese Journal of Applied Physics · 41
Electronic properties in p-type GaN studied by Raman scattering
1998 · H. Harima, T. Inoue, et al. · Applied Physics Letters · 39
Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching
1990 · Y. Sugimoto, M. Taneya, et al. · Journal of Applied Physics · 33
Etching of GaAs for patterning by irradiation with an electron beam and Cl2 molecules
1989 · K. Akita, M. Taneya, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 28
Novel in situ pattern etching of GaAs by electron-beam-stimulated oxidation and subsequent Cl2 gas etching
1991 · Y. Sugimoto, M. Taneya, et al. · Journal of Applied Physics · 27
Single-lobed far-field pattern operation in a phased array with an integrated phase shifter
1987 · M. Matsumoto, M. Taneya, et al. · Applied Physics Letters · 25
Self-pulsation in an InGaN laser-theory and experiment
2003 · V.Z. Tronciu, M. Yamada, et al. · IEEE Journal of Quantum Electronics · 20
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Local Vibrational Modes in p-Type GaN Observed by Raman Scattering
1999 · H. Harima, T. Inoue, et al. · physica status solidi (b) · 19
Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator
1990 · Y. Sugimoto, K. Akita, et al. · Applied Physics Letters · 19
Fine Pattern Formation of Gallium Arsenide by In Situ Electron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist
1990 · Mototaka Taneya, Yoshimasa Sugimoto, et al. · Japanese Journal of Applied Physics · 18
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AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
2004 · Shigetoshi Ito, Yukio Yamasaki, et al. · Japanese Journal of Applied Physics · 17
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Self-pulsation in InGaN laser diodes with saturable absorber layers
2003 · T. Ohno, S. Ito, et al. · Applied Physics Letters · 17
Photo-oxidation of GaAs for i n s i t u patterned-mask formation prior to chlorine gas etching
1990 · M. Taneya, K. Akita, et al. · Applied Physics Letters · 17
I n s i t u overgrowth on GaAs patterned by focused-ion-beam-assisted Cl2 etching
1991 · Y. Sugimoto, M. Taneya, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 16
A multichamber system for in situ lithography and epitaxial growth of GaAs
1991 · Y. Sugimoto, K. Akita, et al. · Review of Scientific Instruments · 15
Electron-beam-induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist
1990 · M. Taneya, Y. Sugimoto, et al. · Journal of Applied Physics · 13
Damaged depth in GaAs processed by Ar plasma etching
1990 · H. Hidaka, K. Akita, et al. · Electronics Letters · 11
Pattern etching and selective growth of GaAs by in-situ electron-beam lithography using an oxidized thin layer
1991 · K. Akita, Yoshimasa Sugimoto, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 10
Works count: 55
Citation count: 863
H-index: 17
I10-index: 27
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