Work

Suppression of crosstalk by using backside deep trench isolation for 1.12μm backside illuminated CMOS image sensor

Year: 2012

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2012.6479093

Authors: Y. Kitamura, H. Aikawa, K. Kakehi, T. Yousyou, K. Eda, T. Minami, S. Uya, Y. Takegawa, H. Yamashita, Y. Kohyama, T. Asami

Institution: Toshiba (Japan)

Language: English

Topic: CCD and CMOS Imaging Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2083259484

FWCI: 3.656

Cites: 6

Cited by: 46

Related to: 10