Work

MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb

Year: 1991

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(91)90594-u

Authors: Hajime Asahi, Tadaaki Kaneko, Yasutoshi Okuno, Shun-ichi Gonda

Institutions: The Institute of Scientific and Industrial Research, The University of Osaka, The University of Osaka

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2086401445

FWCI: 3.807

Cites: 16

Cited by: 18

Related to: 10