Work

Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfaces

Year: 1996

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(95)00907-8

Authors: Jeong-Sik Lee, Sohachi Iwai, Hideo Isshiki, Takashi Meguro, Takuo Sugano, Yoshinobu Aoyagi

Institution: RIKEN

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2093644652

FWCI: 3.264

Cites: 12

Cited by: 9

Related to: 10