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Sohachi Iwai
Observed names:
S Iwai,
S. Iwai,
Sohach Iwai,
Sohachi IWAI,
岩井 荘八,
岩井, 荘八,
荘八 岩井
show all 7
Institution:
RIKEN
Observed institutions:
Yamaguchi University,
RIKEN,
Nagoya University
OpenAlex ID:
A5111753621
Works
66
Awards
3
Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant
1996
·
Satoru Tanaka
, Sohachi Iwai
, et al.
·
Applied Physics Letters
·
278
The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy
1998
·
Xu-Qiang Shen
, Satoru Tanaka
, et al.
·
Applied Physics Letters
·
61
Characteristics of laser metalorganic vapor-phase epitaxy in GaAs
1986
·
Yoshinobu Aoyagi
, Manabu Kanazawa
, et al.
·
Journal of Applied Physics
·
56
Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror
1997
·
M. Ishii
, S. Iwai
, et al.
·
Journal of Crystal Growth
·
46
A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs
1988
·
Atsutoshi Doi
, Sohachi Iwai
, et al.
·
Japanese Journal of Applied Physics
·
43
PDF
High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
2011
·
Yoshinobu Aoyagi
, Misaichi Takeuchi
, et al.
·
Applied Physics Letters
·
42
ZnO LASER BY ELECTRON BEAM EXCITATION
1970
·
Sohachi Iwai
, Susumu Namba
·
Applied Physics Letters
·
37
Emission Spectra in CdS under High Excitation by Electron Beam
1971
·
Sohachi Iwai
, Susumu Namba
·
Applied Physics Letters
·
34
Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
1997
·
Satoru Tanaka
, Sohachi Iwai
, et al.
·
Journal of Crystal Growth
·
32
Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy
1987
·
Han Zhang
, Yoshinobu Aoyagi
, et al.
·
Applied Physics Letters
·
30
Crystallographic selective growth of GaAs by atomic layer epitaxy
1993
·
Hideo Isshiki
, Yoshinobu Aoyagi
, et al.
·
Applied Physics Letters
·
29
Surface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs
1988
·
T. Meguro
, T. Suzuki
, et al.
·
Journal of Crystal Growth
·
24
Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy
1988
·
S. Iwai
, T. Meguro
, et al.
·
Thin Solid Films
·
17
Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
2012
·
Yoshinobu Aoyagi
, Misaichi Takeuchi
, et al.
·
AIP Advances
·
15
PDF
Surface processes of selective growth by atomic layer epitaxy
1994
·
Hideo Isshiki
, Yoshinobu Aoyagi
, et al.
·
Applied Surface Science
·
15
Atomic layer epitaxy of AlAs and AlGaAs
1990
·
T. Meguro
, S. Iwai
, et al.
·
Journal of Crystal Growth
·
15
Surface photo-absorption study of the laser-assisted atomic layer epitaxial growth process of GaAs
1993
·
J.P. Simko
, T. Meguro
, et al.
·
Thin Solid Films
·
13
Laser-assisted atomic layer epitaxy
1991
·
Yoshinobu Aoyagi
, Takashi Meguro
, et al.
·
Materials Science and Engineering B
·
13
Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy
1991
·
S. Iwai
, T. Meguro
, et al.
·
Journal of Crystal Growth
·
11
Surface reaction mechanism and morphology control in AlP atomic layer epitaxy
1998
·
Masashi Ishii
, Sohachi Iwai
, et al.
·
Thin Solid Films
·
10
Observation and control of surface morphology of AlP grown by atomic layer epitaxy
1997
·
Masashi Ishii
, Sohachi Iwai
, et al.
·
Applied Physics Letters
·
10
Anodic oxidation of AlxGa1−xAs
1984
·
Jinzhong Yu
, Yoshinobu Aoyagi
, et al.
·
Journal of Applied Physics
·
10
Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfaces
1996
·
Jeong-Sik Lee
, Sohachi Iwai
, et al.
·
Journal of Crystal Growth
·
9
Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001) vicinal substrates
1995
·
Jeong-Sik Lee
, Sohachi Iwai
, et al.
·
Applied Physics Letters
·
9
Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy
1995
·
Hideo Isshiki
, Yoshinobu Aoyagi
, et al.
·
Journal of Applied Physics
·
8
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Works count:
66
Citation count:
947
H-index:
15
I10-index:
22
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