Work

Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy

Year: 1991

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(91)90445-b

Authors: S. Iwai, T. Meguro, Y. Aoyagi, T. Miyoshi

Institutions: Yamaguchi University, RIKEN

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052486595

FWCI: 1.792

Cites: 9

Cited by: 11

Related to: 10