Comparative Study of Flatband Voltage Transients on High-k Dielectric-Based Metal–Insulator–Semiconductor Capacitors
Year: 2008
Type: article
Abstract: A systematic study of flatband voltage transients occurring in high- dielectric-based metal–insulator–semiconductor structures has been carried out. Materials under study have been , , , , and deposited on n-type silicon. At the flatband condition, in samples measured in darkness, under no electric fields and no field-related charge injection conditions, these transients are due to localized states in the insulator trapping electrons injected from the semiconductor by tunneling. The process is assisted by phonons and it is therefore thermally activated. Dependencies of the flatband voltage transients on the dielectric material, the bias history, and the hysteresis sign of the capacitance–voltage curves are demonstrated. The magnitudes of the flatband voltage transients clearly depend on the layer crystallinity; amorphous materials exhibit much lower transient amplitudes than crystalline or polycrystalline dielectrics.
DOI: 10.1149/1.2975828
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2106441609