Work

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

Year: 2007

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2007.905434

Authors: Takaaki Kawahara, Yukio Nishida, Shinsuke Sakashita, Masaharu Mizutani, Masao Inoue, Shinichi Yamanari, Masahiko Higashi, Takashi Hayashi, Naofumi Murata, Kazuhito Honda, Jiro Yugami, Hidefumi Yoshimura, Masahiro Yoneda

Institution: Renesas Electronics (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2109028287

FWCI:

Cites: 9

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Related to: 10