Work

Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

Year: 2010

Type: article

Abstract: Measuring strain in long-channel MOSFETs on silicon-on-insulator (SOI) and strained-SOI platforms is demonstrated using ultraviolet (UV) Raman spectroscopy. Removal of the Raman inactive strain-inducing metallization layers is avoided by etching trenches under transistors without mask alignment in order to expose the channel region. The technique is shown to be repeatable and does not alter the initial strain state in the channel. The applicability of this technique to short-channel transistors is also discussed.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2043496

Authors: Rouzet M B Agaiby, Sarah H Olsen, Geert Eneman, Eddy Simoen, Emmanuel Augendre, Anthony G O'Neill

Institutions: Max Planck Institute of Microstructure Physics, Newcastle University, Research Foundation - Flanders, IMEC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Award: G3493874433