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R. Agaiby

Observed names: Agaiby, Rouzet Michael Behnam, R Agaiby, R. M. B. Agaiby, RMB Agaiby, Rouzet Agaiby, Rouzet M B Agaiby, Rouzet M.B. Agaiby
OpenAlex ID: A5111541311
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
2006 · G.K. Dalapati, S. Chattopadhyay, et al. · IEEE Transactions on Electron Devices · 79
6F2 buried wordline DRAM cell for 40nm and beyond
2008 · T. Schloesser, F. Jakubowski, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
Reduced self-heating by strained silicon substrate engineering
2008 · A. O’Neill, R. Agaiby, et al. · Applied Surface Science · 32
Strained Si/SiGe MOS technology: Improving gate dielectric integrity
2008 · S.H. Olsen, L. Yan, et al. · Microelectronic Engineering · 24
Gate leakage mechanisms in strained Si devices
2006 · L. Yan, S. H. Olsen, et al. · Journal of Applied Physics · 22
Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs
2006 · S.H. Olsen, E. Escobedo-Cousin, et al. · IEEE Transactions on Electron Devices · 19
Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor
2009 · Dayu Zhou, U. Schroeder, et al. · Journal of Applied Physics · 18
Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability
2014 · S. Kupke, S. Knebel, et al. · IEEE International Reliability Physics Symposium proceedings · 17
9‐4: Low Leakage Organic Backplanes for High Pixel Density Optical Sensors
2018 · Mike Banach, Steve Markham, et al. · SID Symposium Digest of Technical Papers · 13
First Insight Into the Lifetime Acceleration Model of High-$k$$\hbox{ZrO}_{2}/\hbox{SiO}_{2}/\hbox{ZrO}_{2}$ Stacks for Advanced DRAM Technology Nodes
2009 · R. Agaiby, P. Hofmann, et al. · IEEE Electron Device Letters · 13
Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells
2010 · R. M. B. Agaiby, M. Becker, et al. · Journal of Applied Physics · 10
Nanoscale strain characterisation for ultimate CMOS and beyond
2008 · Sarah H. Olsen, Peter Dobrosz, et al. · Materials Science in Semiconductor Processing · 8
Nanometer strain profiling through Si/SiGe quantum layers
2008 · R. M. B. Agaiby, S. H. Olsen, et al. · Journal of Applied Physics · 7
Strained silicon technology
2006 · Erich Kasper, Klara Lyutovich, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 4
Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices
2010 · Rouzet M B Agaiby, Sarah H Olsen, et al. · IEEE Electron Device Letters · 2
Strain Determination
2013 · A. O'Neill, S. Olsen, et al. · Wiley eBooks
Reduced self-heating by strained silicon substrate engineering
2008 · Anthony O'Neill, R. Agaiby, et al. · Newcastle University ePrints (Newcastle Univesity)
[invited] Engineering Self-Heating by Strained Silicon Technology
2007 · Anthony O'Neill, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Reduced self-heating by strained Si substrate engineering
2007 · A.G. O’Neill, SH Olsen, et al.
Strained Si MOSFETs using thin virtual substrates
2006 · Anthony O'Neill, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Analysis of gate leakage characteristics in strained Si MOSFETs
2006 · L Yan, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Strained Si technology
2006 · Anthony O'Neill, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Strain characterisation in advanced Si devices
2006 · Sarah Olsen, P Dobrosz, et al. · Newcastle University ePrints (Newcastle Univesity)
Analysis of gate leakage in strained Si MOSFETs
2006 · L. Yan, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Strained silicon technology
2006 · Anthony O'Neill, Sarah Olsen, et al. · Newcastle University ePrints (Newcastle Univesity)
Works count: 29
Citation count: 316
H-index: 10
I10-index: 11
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