Work

Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

Year: 1999

Type: article

Source: IEEE Microwave and Guided Wave Letters

DOI: 10.1109/75.766762

Authors: V. Danelon, F. Aniel, J.L. Benchimol, J. Mba, M. Riet, P. Crozat, G. Vernet, R. Adde

Institution: Université Paris-Sud

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2109899501

FWCI: 3.848

Cites: 7

Cited by: 19

Related to: 10