Author

J.L. Benchimol

Observed names: Benchimol, J.L., J L Benchimol, J. L. Benchimol, J.-L. Benchimol, J.L Benchimol, Jean L. Benchimol, Jean L. Benchimol Jean L. Benchimol, Jean Louis Benchimol, Jl. Benchimol

Institution: Orange (France)

Observed institutions: Centre National de la Recherche Scientifique, Orange (France), NTT (Japan), NTT Basic Research Laboratories, Alcatel-Lucent (France), McGill University

OpenAlex ID: A5111594683

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

1987 · N. Kobayashi, J. L. Benchimol, et al. · Applied Physics Letters · 117

Chemical beam epitaxy of indium phosphide

1990 · J.L. Benchimol, F. Alaoui, et al. · Journal of Crystal Growth · 72

InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

1982 · M. Quillec, C. Daguet, et al. · Applied Physics Letters · 72

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

1991 · J.L. Benchimol, G. Le Roux, et al. · Journal of Crystal Growth · 50

Raman scattering in In1−xGaxAsyP1−y quaternary alloys

1986 · R. K. Soni, S. C. Abbi, et al. · Journal of Applied Physics · 39

Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy

1989 · J.L. Benchimol, F. Alexandre, et al. · Journal of Crystal Growth · 36

MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits

2003 · S. Blayac, M. Riet, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 35

Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

1990 · F. Alexandre, J.L. Benchimol, et al. · Electronics Letters · 33

Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP

1998 · I.F.L. Dias, B. Nabet, et al. · IEEE Photonics Technology Letters · 31

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 · J.L. Benchimol, F. Alexandre, et al. · Electronics Letters · 31

Be diffusion mechanisms in InGaAs during post-growth annealing

1995 · S. Koumetz, J. Marcon, et al. · Applied Physics Letters · 25

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

1997 · D. Caffin, A.-M. Duchenois, et al. · IEEE Transactions on Electron Devices · 24

InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits

2001 · P. Andre, S. Blayac, et al. · IEEE Journal of Solid-State Circuits · 21

Improved mobility in InxGa1−xAsyP1−y alloys using high temperature liquid phase epitaxy

1983 · J.L. Benchimol, M. Quillec, et al. · Journal of Crystal Growth · 21

High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications

2003 · J. Thuret, C. Gonzalez, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 20

Growth and characterization of InxGa1−xAs/InyGa1−yAs strained-layer superlattice on InP substrate

1986 · M. Quillec, J. Y. Marzin, et al. · Journal of Applied Physics · 20

Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

1999 · V. Danelon, F. Aniel, et al. · IEEE Microwave and Guided Wave Letters · 19

Fabrication and Luminescence of Narrow Reactive Ion Etched In1-xGaxAs/InP and GaAs/Gas1-xAlxAs Quantum Wires

1991 · A. Izrael, J. Y. Marzin, et al. · Japanese Journal of Applied Physics · 19

Passivation of InP-based HBTs for high bit rate circuit applications

2002 · D. Caffin, L. Bricard, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 18

Anisotropy in the magnetic susceptibility of 2H-TaSe2

1978 · J.L. Benchimol, F.T. Hedgcock, et al. · Solid State Communications · 16

TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures

2000 · G Patriarche, F Glas, et al. · Journal of Crystal Growth · 15

InP DHBT technology and design methodology for high-bit-rate optical communications circuits

1998 · P. Andre, J.-L. Benchimol, et al. · IEEE Journal of Solid-State Circuits · 15

Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy

1995 · P. Legay, F. Alexandre, et al. · Journal of Crystal Growth · 15

Innovative passivated heterojunction bipolar transistor grown by CBE

1992 · C. Dubon-Chevallier, F. Alexandre, et al. · Electronics Letters · 15

Optical studies of In0.53Ga0.47As

1983 · J.Y. Marzin, J.L. Benchimol, et al. · Solid State Communications · 15

Works count: 102

Citation count: 1,151

H-index: 18

I10-index: 38