Work

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

Year: 1997

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.585538

Authors: D. Caffin, A.-M. Duchenois, F. Heliot, C. Besombes, J.-L. Benchimol, P. Launay

Institution: Orange (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102932429

FWCI: 3.846

Cites: 15

Cited by: 24

Related to: 10