Author

A.M. Duchenois

Observed names: A. M. Duchenois, A.-M. Duchenois, A.M Duchenois, Duchenois, A. M.

OpenAlex ID: A5110196442

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

1997 · D. Caffin, A.-M. Duchenois, et al. · IEEE Transactions on Electron Devices · 24

Passivation of InP-based HBTs for high bit rate circuit applications

2002 · D. Caffin, L. Bricard, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 18

InP DHBT technology and design methodology for high-bit-rate optical communications circuits

1998 · P. Andre, J.-L. Benchimol, et al. · IEEE Journal of Solid-State Circuits · 15

InP/InGaAs double-HBT technology for high bit-ratecommunication circuits

1997 · D. Caffin, M. Bouché, et al. · Electronics Letters · 15

Reproducible low-resistivity AuMn ohmic contact for p -type GaAs

1985 · C. Dubon-Chevallier, A.M. Duchenois, et al. · Electronics Letters · 12

Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs

2000 · J.L. Benchimol, J. Mba, et al. · Journal of Crystal Growth · 11

CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits

1998 · J.L Benchimol, J Mba, et al. · Journal of Crystal Growth · 11

40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments

2003 · J. Godin, P. Andre, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 7

InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model

2003 · S. Blayac, M. Riet, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 7

Double heterojunction GaAs-GaAlAs bipolar transistors grown by MOCVD for emitter coupled logic circuits

1983 · C. Dubon, R. Azoulay, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

A InP DHBT technology for high bit-rate optical communications circuits

2002 · J. Godin, P. Andre, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 6

Etching procedures of GaAs: Cathodoluminescence study of the induced damages and of the recovering techniques

1990 · A. C. Papadopoulo, C. Dubon-Chevallier, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 4

A double InGaAs/InP HBT technology for lightwave communication circuits design

2002 · P. Launay, D. Caffin, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 3

Beneficial Contribution of Compositionally In(x)Ga(1-x)As Graded Base on InP Double Heterojunction Bipolar Transistors (DHBT's) for Very High Speed Transmission Circuits

1998 · J.L. Benchimol, A.M. Duchenois, et al. · European Solid-State Device Research Conference · 3

Planar InGaP/GaAs HBTs for high speed optoelectroniccircuit applications

1997 · R. Driad, P. Desrousseaux, et al. · Electronics Letters · 3

Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low-temperature cathodoluminescence

1989 · C. Dubon-Chevallier, A. C. Papadopoulo, et al. · Journal of Applied Physics · 3

New self-aligned processes for III–V electronic high speed devices

1999 · J. Etrillard, C. Besombes, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2

44 Gb/s InP DHBT MUX-Driver IC for external laser modulation

1999 · Kauffmann, N., Andre, P., et al. · AMS Acta (University of Bologna) · 1

Fully-planar AlGaAs/GaAs HBT's achieved by selective CBE regrowth

1994 · R. Driad, A.M. Duchenois, et al. · IEEE Electron Device Letters · 1

Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison

1986 · C. Dubon-Chevallier, P. Desrousseaux, et al. · Springer series in electrophysics · 1

Low-power operation of InP-based DHBT's for high bit rate circuit applications: reduction of saturation voltage (V/sub sat/)

2002 · J. Mba, D. Caffin, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

High Frequency InGaP/GaAs Planar Heterojunction Bipolar Transistors

1995 · R. Driad, A.M. Duchenois, et al. · European Solid-State Device Research Conference

Fully planar AlGaAs/GaAs heterojunction bipolar transistors using chemical beam epitaxy selective growth

1994 · R. Driad, A.M. Duchenois, et al. · Materials Science and Engineering B

Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth

1994 · R. Driad, A.M. Duchenois, et al. · European Solid-State Device Research Conference

A New GaAlAs-GaInP-GaAs HBT Technology for Digital and Microwave Applications

1993 · P. Launay, P. Desrousseaux, et al. · European Solid-State Device Research Conference

Works count: 28

Citation count: 154

H-index: 7

I10-index: 7