Year: 2004
Type: other
Abstract: Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.
Author: F.N. Cubaynes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2135201491