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F.N. Cubaynes

Observed names: Cubaynes, F.N., Cubaynes, Florence N, F. Cubaynes, F. N. Cubaynes, Florence Cubaynes, Florence N. Cubaynes
Institution: Philips (Belgium)
OpenAlex ID: A5035408227
Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
2006 · Vaidy Subramanian, Bertrand Parvais, et al. · IEEE Transactions on Electron Devices · 154
RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics
2003 · J. Schmitz, F.N. Cubaynes, et al. · IEEE Electron Device Letters · 73
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Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
2006 · V. Subramaniana, B. Parvais, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 60
Gate current: Modeling, ΔL extraction and impact on RF performance
2002 · R. van Langevelde, A.J. Scholten, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing
2002 · P. K. Hurley, B. J. O’Sullivan, et al. · Journal of The Electrochemical Society · 37
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Test Structure Design Considerations for RF-CV Measurements on Leaky Dielectrics
2004 · J. Schmitz, F.N. Cubaynes, et al. · IEEE Transactions on Semiconductor Manufacturing · 21
The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors
2001 · F.N. Cubaynes, P.A. Stolk, et al. · Materials Science in Semiconductor Processing · 19
Thickness and composition of ultrathin SiO2 layers on Si
2004 · C. van der Marel, M. A. Verheijen, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 16
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Flat band voltage shift and oxide properties after rapid thermal annealing
2001 · B.J. O'Sullivan, P.K. Hurley, et al. · Microelectronics Reliability · 14
Quantitative depth profiling of SiOxNy layers on Si
2002 · J.G.M. van Berkum, M.J.P. Hopstaken, et al. · Applied Surface Science · 13
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μ
2005 · K. Henson, R.J.P. Lander, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Test structure design considerations for RF-CV measurements on leaky dielectrics
2003 · J. Schmitz, F.N. Cubaynes, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 10
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
2005 · L. Trojman, L.-Å. Ragnarsson, et al. · Microelectronic Engineering · 8
Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics
2005 · F. N. Cubaynes, V. C. Venezia, et al. · Applied Physics Letters · 8
Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions
2004 · Radu Surdeanu, Bartlomiej J. Pawlak, et al. · Japanese Journal of Applied Physics · 7
Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
2004 · A. Veloso, F.N. Cubaynes, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 6
Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors
2005 · S. Nuttinck, A.J. Scholten, et al. · IEEE Transactions on Electron Devices · 5
RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications
2002 · A. Veloso, M. Jurczak, et al. · European Solid-State Device Research Conference · 4
Ultrashallow Junction Formation and Gate Activation in Deep-Submicron CMOS
2000 · P. A. Stolk, F. N. Cubaynes, et al. · MRS Proceedings · 4
A manufacturable 25 nm planar MOSFET technology
2002 · Y.V. Ponomarev, J.J.G.P. Loo, et al. · Symposium on VLSI Technology · 3
Ultra-thin plasma nitrided oxide gate dielectrics for advanced MOS transistors
2004 · F.N. Cubaynes · University of Twente Research Information · 2
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The RF-CV method for characterization of leaky gate dielectrics
2004 · J. Schmitz, F.N. Cubaynes, et al. · Microelectronic Engineering · 2
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Tantalum-based Gate Electrode Metals for Advanced CMOS Applications
2006 · Jacob Hooker, Robert Lander, et al. · ECS Meeting Abstracts · 1
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Optimal frequency range selection for full C-V characterization above 45MHz for ultra thin (1.2-nm) nitrided oxide MOSFETs
2004 · W. Jeamsaksiri, A. Mercha, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 1
In-line electrical characterization of ultrathin gate dielectric films
2003 · F. Cubaynes, S. Passefort, et al. · ASMC proceedings · 1
Works count: 33
Citation count: 533
H-index: 11
I10-index: 12
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