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45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μ

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Year: 2005
Type: conference-paper
Source: Technical digest - International Electron Devices Meeting/Technical digest
DOI: 10.1109/iedm.2004.1419312
Authors: K. Henson, R.J.P. Lander, M. Demand, C.J.J. Dachs, B. Kaczer, W. Deweerd, T. Schram, Z. Tokeil, J.C. Hooker, F.N. Cubaynes, S. Beckx, W. Boullart, B. Coenegrachts, J. Vertommen, O. Richard, H. Bender, W. Vandervorst, M. Kaiser, J.-L. Everaert, M. Jurczak, S. Biesemans
Institutions: IMEC, Philips (Belgium), Philips (Netherlands)
Language: English

Topic: Semiconductor materials and devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funder: European Commission
OpenAlex ID: W1590468063
FWCI: 6.191
Cites:
Cited by: 12
Related to: 10
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