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J.-L. Everaert

Observed names: Everaert, Jacques, J L Everaert, J-L. Everaert, J. -L. EVERAERT, J. Everaert, J. L. Everaert, J.-L. EVERAERT, J.L. Everaert, JL. Everaert
Institution: IMEC
OpenAlex ID: A5111912401
1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation
2015 · H. Yu, M. Schaekers, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory
2014 · M. Popovici, J. Swerts, et al. · Applied Physics Letters · 37
Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
2017 · J-L. Everaert, M. Schaekers, et al. · Symposium on VLSI Technology · 35
Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory
2006 · D. J. Wouters, D. Maes, et al. · Journal of Applied Physics · 34
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10Ω·cm2contact resistivity achieved on Ga doped Ge using nanosecond laser activation
2017 · Lin-Lin Wang, Hao Yu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers
1990 · J L Everaert, R L Van Meirhaeghe, et al. · Semiconductor Science and Technology · 27
Conformal Doping of FINFETs: a Fabrication and Metrology Challenge
2008 · W. Vandervorst, J. L. Everaert, et al. · AIP conference proceedings · 26
Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
2022 · C. Porret, J.-L. Everaert, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
2009 · N.D. Nguyen, E. Rosseel, et al. · Thin Solid Films · 17
Probing doping conformality in fin shaped field effect transistor structures using resistors
2008 · W. Vandervorst, M. Jurczak, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 13
Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology
2006 · C. Ortolland, L.-Å. Ragnarsson, et al. · Symposium on VLSI Technology · 13
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μ
2005 · K. Henson, R.J.P. Lander, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Advanced phosphorous emitters for high efficiency Si solar cells
2009 · T. Janssens, N.E. Posthuma, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 11
Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation
2007 · Barry J. O'Sullivan, Vidya S. Kaushik, et al. · IEEE Transactions on Electron Devices · 11
Heterostructure at CMOS source/drain: Contributor or alleviator to the high access resistance problem?
2016 · Hao Yu, M. Schaekers, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices
2016 · H. Yu, M. Schaekers, et al. · IEEE International Interconnect Technology Conference (IITC) · 9
Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
2010 · J. L. Everaert, E. Rosseel, et al. · Applied Physics Letters · 8
Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics
2005 · F. N. Cubaynes, V. C. Venezia, et al. · Applied Physics Letters · 8
Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μ m CMOS Technology
2004 · D. MAES, J.-L. EVERAERT, et al. · Integrated ferroelectrics · 7
MECHANICAL STABILITY OF Ir ELECTRODES USED FOR STACKED SrBi2Ta2O9 FERROELECTRIC CAPACITORS
2006 · J. G. LISONI, J. A. JOHNSON, et al. · Integrated ferroelectrics · 6
Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology
2009 · C. Ortolland, L.-A. Ragnarsson, et al. · International Workshop on Junction Technology · 5
Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor
2024 · R. Sarkar, R. Ritzenthaler, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance
2010 · JL. Everaert, E. Rosseel, et al. · ECS Transactions · 3
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Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation.
2008 · G. Zschätzsch, W. Vandervorst, et al. · AIP conference proceedings · 3
SiON Gate Dielectric Formation by Rapid Thermal Oxidation of Nitrided Si.
2006 · J.-L. Everaert, T. Conard, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 3
Works count: 47
Citation count: 420
H-index: 12
I10-index: 15
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