Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance
Year: 2010
Type: conference-paper
Abstract: A recently proposed noncontact method for mobility measurement in an inversion layer created by corona charging is modified taking advantage of two unique features of corona-voltage metrology; 1. the exact knowledge of the corona charge placed on dielectric surface and 2. the straightforward determination of the semiconductor space charge potential barrier, Vsb. These features, not available in MOS measurements simplify determining the inversion charge, Qinv. Combined with ac-surface photovoltage measurement of the inversion layer sheet resistance, Rs, they are a basis for novel simplified approach to mobility measurement. The method is illustrated using SiO2 and high-k stacked dielectrics on p-Si.
Source: ECS Transactions
DOI: 10.1149/1.3375586
Authors: JL. Everaert, E. Rosseel, A. Meszaros, K. Kis-Szabo, P. Tutto, A. Pap, T. Pavelka, Marshall Wilson, A. Findlay, P. Edelman, J. Lagowski
Institution: IMEC
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2118939490